unisonic technologies co., ltd UF9Z24 power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-740.b 12a, 55v p-channel power mosfet ? description the utc UF9Z24 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed, cost-effectiveness and mini mum on-state re sistance. it can also withstand high energy in the avalanche. ? features * r ds(on) =175m ? v gs =-55v, i d =-12a * high switching speed ? symbol 1.gate 3.source 2.drain to-220 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UF9Z24l-ta3-t UF9Z24g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
UF9Z24 power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-740.b ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -55 v gate-source voltage v gss 20 v drain current continuous t c =25c i d -12 a pulsed i dm -48 a single pulsed avalanche current (l=0.1mh) i as -7.2 a single pulsed avalanche energy (l=0.1mh)(note 1) e as 96 mj power dissipation p d 38 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 3.3 c/w notes: 1. duty cycle 1 %. ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -55 v drain-source leakage current i dss v ds =-55v, v gs =0v -25 a gate-source leakage current forward i gss v gs =+20v +100 na reverse v gs =-20v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -2.0 -4.0 v static drain-source on-state resistance r ds ( on ) v gs =-10v, i d =-12a (note 1) 0.175 ? on state drain current (note 1) i d ( on ) v gs =-10v, v ds =-5v -12 a dynamic parameters (note 2) input capacitance c iss v gs =0v, v ds =-25v, f=1.0mhz (note 2) 350 pf output capacitance c oss 170 pf reverse transfer capacitance c rss 92 pf switching parameters total gate charge q g v gs =-10v, v ds =-44v, i d =-7.2a (note 3) 19 nc gate to source charge q gs 5.1 nc gate to drain charge q gd 10 nc turn-on delay time t d ( on ) v dd =-28v, i d =-7.2a, r g =24 ? , r d =3.7 ? (note 3) 13 ns rise time t r 55 ns turn-off delay time t d ( off ) 23 ns fall-time t f 37 ns source- drain diode ratings and characteristics (note 2) maximum body-diode continuous current i s -12 a maximum body-diode pulsed current i sm -48 a drain-source diode forward voltage v sd i f =-12a, v gs =0v (note 1) -1.6 v notes: 1. pulse test; pulse width 300 s, duty cycle 2 %. 2. guaranteed by design, not subject to production testing. 3. independent of oper ating temperature.
UF9Z24 power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-740.b ? typical characteristics drain current, -i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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